 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications * * * The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 s (typ.) Low switching loss * * : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 20 20 40 20 40 45 150 -55 to 150 Unit V V A JEDEC JEITA TOSHIBA 2-10R1C A W C C Weight: 1.7 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 2.78 4.23 Unit C/W C/W Equivalent Circuit Collector Gate Emitter 1 2002-04-08 GT20J321 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching loss Turn-off switching loss Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff VF trr IF = 20 A, VGE = 0 IF = 20 A, di/dt = -100 A/s Inductive Load VCC = 300 V, IC = 20 A VGG = +15 V, RG = 33 (Note 1) (Note 2) Test Condition VGE = 20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 2 mA, VCE = 5 V IC = 20 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3.5 Typ. 2.0 3000 0.06 0.04 0.17 0.24 0.04 0.34 0.40 0.43 100 Max 500 1.0 6.5 2.45 mJ 2.1 V ns s Unit nA mA V V pF Switching loss Peak forward voltage Reverse recovery time Note 1: Switching time measurement circuit and input/output waveforms VGE 0 -VGE IC RG VCE 0 VCE 10% td (off) toff 10% tf 10% td (on) 10% tr ton L VCC IC 90% 90% 90% 10% Note 2: Switching loss measurement waveforms VGE 0 90% 10% IC VCE Eoff Eon 5% 0 2 2002-04-08 GT20J321 IC - VCE 40 Common emitter Tc = 25C 9 20 15 20 VCE - VGE Common emitter Tc = -40C (V) Collector-emitter voltage VCE 16 12 8 (A) Collector current IC 30 20 8 40 10 4 IC = 5 A 0 0 4 8 12 16 20 20 10 VGE = 7 V 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 20 Common emitter Tc = 25C 20 VCE - VGE Common emitter Tc = 125C (V) Collector-emitter voltage VCE 12 Collector-emitter voltage VCE 16 (V) 16 12 8 40 10 20 8 10 4 IC = 5 A 0 0 40 20 4 IC = 5 A 0 0 4 8 12 16 20 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 40 5 Common emitter VCE = 5 V Common emitter VGE = 15 V VCE (sat) - Tc Collector-emitter saturation voltage VCE (sat) (V) (A) 4 30 IC 40 3 30 20 10 1 IC = 5 A Collector current 20 2 10 Tc = 125C -40 25 0 0 4 8 12 16 20 0 -60 -20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-04-08 GT20J321 Switching time ton, tr, td (on) - RG 3 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25C : Tc = 125C (Note 1) 3 Switching time ton, tr, td (on) - IC Common emitter VCC = 300 V VGG = 15 V RG = 33 : Tc = 25C : Tc = 125C (Note 1) (s) ton, tr, td (on) 1 (s) 1 0.3 ton 0.1 td (on) tr 0.03 ton, tr, td (on) 0.3 ton td (off) 0.03 tr Switching time Switching time 10 30 100 300 1000 0.1 0.01 1 3 0.01 0 4 8 12 16 20 Gate resistance RG () Collector current IC (A) Switching time toff, tf, td (off) - RG 10 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25C : Tc = 125C (Note 1) 10 Switching time toff, tf, td (off) - IC Common emitter VCC = 300 V VGG = 15 V RG = 33 : Tc = 25C : Tc = 125C (Note 1) (s) 3 (s) 3 toff, tf, td (off) 1 toff, tf, td (off) 1 td (off) toff 0.3 td (off) 0.1 toff 0.3 Switching time Switching time 0.1 tf 0.03 tf 0.01 1 3 10 30 100 300 1000 0.03 0.01 0 4 8 12 16 20 Gate resistance RG () Collector current IC (A) Switching loss 10 Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25C : Tc = 125C (Note 2) Eon, Eoff - RG 10 Switching loss Common emitter VCC = 300 V VGG = 15 V IC = 20 A : Tc = 25C : Tc = 125C (Note 2) Eon 0.3 Eon, Eoff - IC (mJ) (mJ) Eon, Eoff Switching loss Eon 3 3 Eon, Eoff 1 1 Switching loss 0.3 Eoff 0.1 Eoff 0.1 1 3 10 30 100 300 1000 0.03 0 4 8 12 16 20 Gate resistance RG () Collector current IC (A) 4 2002-04-08 GT20J321 C - VCE 10000 3000 500 VCE, VGE - QG (V) Cies Common emitter RL = 15 Tc = 25C 20 C 100 Coes 30 10 3 1 Common emitter VGE = 0 f = 1 MHz Tc = 25C 3 10 30 100 300 200 VCE = 100 V 100 200 4 8 Cres 300 1000 0 0 20 40 60 80 100 120 0 140 Collector-emitter voltage VCE (V) Gate charge QG (nC) IF - VF 40 Common 100 collector VGE = 0 Common collector di/dt = -100 A/s VGE = 0 : Tc = 25C : Tc = 125C trr, Irr - IF 1000 (A) (A) Irr 30 Reverse recovery current IF 20 Tc = 125C 25 10 -40 0 0 10 trr 100 Irr 3 30 0.5 1 1.5 2 2.5 3 1 0 5 10 15 10 20 Forward voltage VF (V) Forward current IF (A) Safe Operating Area 100 IC max (pulse)* 100 Reverse Bias SOA (A) IC Collector current Collector current DC operation 3 *: Single pulse 1 Tc = 25C Curves must be 0.3 derated linearly with increase in temperature. 0.1 1 3 10 30 100 300 1000 10 ms* 1 ms* IC 10 (A) 30 IC max (continuous) 50 s* 30 100 s* 10 3 1 0.3 0.1 1 Tj 125C VGE = 15 V RG = 33 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 5 2002-04-08 Reverse recovery time Forward current trr 30 300 (ns) Gate-emitter voltage 300 300 12 Capacitance VGE 1000 Collector-emitter voltage VCE 400 16 (pF) (V) GT20J321 (C/W) 10 2 rth (t) - tw 10 1 FRD 0 IGBT rth (t) 10 Transient thermal resistance 10 -1 10 -2 10 -3 Tc = 25C -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -4 10 Pulse width tw (s) 6 2002-04-08 GT20J321 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2002-04-08 |
Price & Availability of GT20J321
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |